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Journal Article
Formation and interface characterization of Bi2Se3/ YBa2Cu3O7 thin films via two-step growth using cracked-Se technique
- Authors
- Woo-Jung Lee, Tae-Ha Hwang, Dae-Hyung Cho, Jaehan Park, Mann-Ho Cho, Yong-Duck Chung
- Issue Date
- 2025-12
- Citation
- ETRI Journal, v.권호미정, pp.1-10
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원
- Language
- English
- Type
- Journal Article
- Abstract
- Achieving a high-quality interface between the topological insulator Bi
2 Se3 and the high-critical temperature superconductors YBa2 Cu3 O7 (YBCO) remains challenging because of the rough surface morphology and elemental interdiffusion originating from YBCO. In previous studies, the Bi2 Se3 thin films directly deposited on YBCO exhibited poor crystallinity, which was significantly improved after a subsequent cracked-Se treatment, although substantial elemental diffusion from YBCO still persisted. Here, we employ a two-step growth technique consisting of an initial Bi thin-film deposition followed by a cracked-Se treatment and additionally introduce a thin Se buffer layer before the Bi deposition to effectively mitigate elemental diffusion. Structural and chemical characterizations demonstrate that the Se buffer layer effectively suppresses Cu diffusion, facilitates the formation of a uniform quintuple-layer structure, and improves the crystallinity of the Bi2 Se3 thin films. Electrical measurements showed that YBCO with the Se buffer exhibits a higher superconducting transition temperature (~10 K) than the sample without the buffer (~4 K).
- KSP Keywords
- Bi deposition, Critical temperature, Cu diffusion, Electrical Measurements, High-quality, Layer structure, Rough surface morphology, Thin film deposition, buffer layer, cracked-Se, elemental diffusion
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
