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Journal Article Spatial Distribution Control of Room-Temperature Single Photon Emitters in the Telecom Range from GaN Thin Films Grown on Patterned Sapphire Substrates
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Authors
Hyemin Kim, Yong-Ho Song, Young-Ho Ko, Yong-Hoon Cho
Issue Date
2025-02
Citation
Advanced Quantum Technologies, v.8, no.2, pp.1-6
ISSN
2511-9044
Publisher
John Wiley & Sons
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1002/qute.202400177
Abstract
Spatial distribution-controlled single-photon emitters operating is demonstrated in telecom wavelength range at room-temperature with GaN thin film grown on a patterned sapphire substrate (PSSs) with varying pattern sizes and dimensions. The analysis focuses on the various optical properties of defects within the GaN thin film, particularly their interactions with PSS. The confocal fluorescence mapping at room temperature revealed localized single-photon emitters inside the GaN layers located between the patterns. In addition, compared to conventional sapphire substrates, PSS can scatter photons outside the total reflection cone, thereby enhancing the light extraction efficiency. From the samples, the single photon emission is observed in the telecom wavelength ranging from 1.1 to 1.35 µm at room temperature, which is critical for advancing quantum communication technologies, and elucidate how the physical characteristics of PSS influence the performance and efficiency of GaN-based single-photon emitters.
KSP Keywords
Extraction efficiency(EE), GaN layers, GaN thin films, GaN-Based, Patterned sapphire substrates(PSS), Physical characteristics, Room temperature, Single photon emission, Single photon emitters, Spatial distribution, Wavelength range