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Journal Article
Growth Behaviors of InAs/GaAs Quantum Dots Using Metal−Organic Chemical Vapor Deposition with Dual-Channel AsH3 Supply and H2 Carrier Gas Flow Rate Variation
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- Authors
- HoSung Kim, Mireu Lee, Dae-Myeong Geum, Young-Ho Ko
- Issue Date
- 2025-08
- Citation
- Crystal Growth and Design, v.25, no.16, pp.6628-6635
- ISSN
- 1528-7483
- Publisher
- American Chemical Society
- Language
- English
- Type
- Journal Article
- KSP Keywords
- Carrier Gas Flow Rate, Chemical Vapor Deposition, Flow rate variation, Growth behavior, InAs/GaAs quantum dots, Organic chemical, dual-channel, quantum dots(QD)