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Growth Behaviors of InAs/GaAs Quantum Dots Using Metal−Organic Chemical Vapor Deposition with Dual-Channel AsH3 Supply and H2 Carrier Gas Flow Rate Variation
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- Authors
- HoSung Kim, Mireu Lee, Dae-Myeong Geum, Young-Ho Ko
- Issue Date
- 2025-08
- Citation
- Crystal Growth and Design, v.25, no.16, pp.6628-6635
- ISSN
- 1528-7483
- Publisher
- American Chemical Society
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we conducted a comprehensive investigation into the effects of a dual-channel arsine (AsH
3 ) supply and varying hydrogen (H2 ) carrier gas flow rates on the growth of InAs/GaAs quantum dots (QDs) via metal–organic vapor deposition (MOCVD). The implementation of a dual-channel AsH3 supply resulted in more stable and uniform QD growth compared with the conventional single-channel configuration, primarily due to the abrupt change in the V/III ratio. Moreover, the H2 flow rate was found to play a critical role in determining the QD size distribution and optical performance. Notably, at a moderate H2 flow rate of 100 sccm, enhanced QD size uniformity and increased photoluminescence (PL) intensity were observed. These findings provide valuable insights into achieving high-quality InAs/GaAs QDs through precise control of the AsH3 supply configuration and H2 carrier gas flow during the MOCVD growth process.
- KSP Keywords
- Abrupt change, Carrier Gas Flow Rate, Channel configuration, Chemical Vapor Deposition, Flow rate variation, Growth behavior, Growth process, High-quality, InAs/GaAs quantum dots, MOCVD growth, Optical performance