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Hydrogen-Stable Top-Gate Self-Aligned a-IGZO TFT With Tungsten Nitride Barrier on Source/Drain
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- Authors
- Heetae Kim, Hoseok Lee, Heesu Kim, Jungwoo Bong, Chihun Sung, Jeho Na, Bada Kim, Min Ju Kim, Keun Heo, Sung Haeng Cho, Byung Jin Cho
- Issue Date
- 2026-01
- Citation
- IEEE Electron Device Letters, v.47, no.1, pp.96-99
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- This study presents tungsten nitride (WN) as an effective hydrogen (H) barrier for source/drain (S/D) contacts in top-gate self-aligned (TG-SA) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). It was confirmed that the H could diffuse into the channel through the S/D contacts, affecting the carrier concentration ( NC) in the channel. By incorporating the WN as a H-barrier in the S/D contact stack, the fabricated TG-SA a-IGZO TFTs could maintain their electrical properties without any degradation even after forming gas anneal (FGA) at a temperature of 300°C.
- Keyword
- Hydrogen diffusion, TG-SA a-IGZO TFTs, tungsten nitride
- KSP Keywords
- Amorphous InGaZnO, Carrier concentration, Electrical properties, Forming gas anneal, Thin-Film Transistor(TFT), a-IGZO TFTs, amorphous indium-gallium-zinc oxide(a-IGZO), hydrogen diffusion, self-Aligned, thin film(TF), top-gate