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Conference Paper
X-band GaN Front-end MMIC using 0.2 um GaN HEMT Technology
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- Authors
- YounSub Noh, JongWon Lim, Sung-Bum Bae, ByoungChul Jun, JiHun Kwon
- Issue Date
- 2026-01
- Citation
- International Conference on Electronics, Information, and Communication (ICEIC) 2026, pp.999-1002
- Publisher
- 대한전자공학회
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper, we designed and manufactured an X-band front-end MMIC with a power amplifier, low-noise amplifier, and switch integrated into one chip using 0.2 µm GaN HEMT technology. The front-end MMIC with a chip size of 4.66 mm x 3 mm, shows receiver characteristics of 25 dB gain and 2 dB noise figure and transmitter characteristics of 23.5 dB gain, 43.5 dBm output power, and 37 % PAE (power added efficiency) in the frequency range of 9 ~ 10 GHz.
- Keyword
- Front-end, GaN, Low Noise Amplifier, Power Amplifier, MMIC, Switch, X-band
- KSP Keywords
- 10 Ghz, Frequency range, Front-End, GaN HEMT technology, Low-Noise Amplifier(LNA), One chip, Output power, noise figure, power amplifiers(PAs), x-band