This article presents a nonplanar niobium oxide (NbOx) neuron device fabricated using an atomic layer deposition (ALD) method for use in oscillatory neural networks (ONNs). Potentially, such nonplanar geometry allows for high-density arrays. The desired threshold switching (TS) characteristics are achieved through an interfacial method using a thin titanium (Ti) layer. X-ray photoelectron spectroscopy (XPS) analysis confirms that the oxyphilic Ti layer reduces Nb2O5 to the desired NbO2 stoichiometry, which is crucial for the device's functionality. The device demonstrates S-type negative differential resistance (NDR) under current-controlled operation, and its self-oscillation capabilities are verified within an electrical oscillator circuit. The oscillation frequency is shown to increase linearly with the applied voltage (Vd). The nonplanar structure and the use of a Ti layer to tune the material's properties allow for the realization of a compact, low-power neuromorphic device without the need for additional thermal annealing. Finally, the study demonstrates the practical application of these NbOx neurons in an ONN architecture for pattern recognition. The system successfully recognizes binary representations of digits. The network's functionality relies on phase synchronization between neurons, where a binary pattern is encoded by applying a delayed VDD to each neuron pixel.
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
Copyright Policy
ETRI KSP Copyright Policy
The materials provided on this website are subject to copyrights owned by ETRI and protected by the Copyright Act. Any reproduction, modification, or distribution, in whole or in part, requires the prior explicit approval of ETRI. However, under Article 24.2 of the Copyright Act, the materials may be freely used provided the user complies with the following terms:
The materials to be used must have attached a Korea Open Government License (KOGL) Type 4 symbol, which is similar to CC-BY-NC-ND (Creative Commons Attribution Non-Commercial No Derivatives License). Users are free to use the materials only for non-commercial purposes, provided that original works are properly cited and that no alterations, modifications, or changes to such works is made. This website may contain materials for which ETRI does not hold full copyright or for which ETRI shares copyright in conjunction with other third parties. Without explicit permission, any use of such materials without KOGL indication is strictly prohibited and will constitute an infringement of the copyright of ETRI or of the relevant copyright holders.
J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
If you have any questions or concerns about these terms of use, or if you would like to request permission to use any material on this website, please feel free to contact us
KOGL Type 4:(Source Indication + Commercial Use Prohibition+Change Prohibition)
Contact ETRI, Research Information Service Section
Privacy Policy
ETRI KSP Privacy Policy
ETRI does not collect personal information from external users who access our Knowledge Sharing Platform (KSP). Unathorized automated collection of researcher information from our platform without ETRI's consent is strictly prohibited.
[Researcher Information Disclosure] ETRI publicly shares specific researcher information related to research outcomes, including the researcher's name, department, work email, and work phone number.
※ ETRI does not share employee photographs with external users without the explicit consent of the researcher. If a researcher provides consent, their photograph may be displayed on the KSP.