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Fully transparent synaptic transistors with a single channel layer enabling ternary logic via Fowler-Nordheim tunneling for in-memory computing
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- Authors
- Chohyeon Park, Jung Wook Lim
- Issue Date
- 2026-03
- Citation
- Materials Science in Semiconductor Processing, v.204
- ISSN
- 1369-8001
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Multivalued logic (MVL) is a promising alternative to binary logic in next-generation computing systems, enabling higher data density and lower circuit complexity. This study presents a fully transparent synaptic transistor-based MVL device that integrates logic and memory functionalities within a single device, as incorporating memory functionality can transform MVL devices into powerful platforms for in-memory computing. The proposed device, employing multilayered transparent electrodes and a CMOS-compatible single TiO2 channel layer, not only expands applicability to transparent electronics but also simplifies the fabrication process significantly. The device implements stable, well-defined ternary logic states via Fowler–Nordheim tunneling between the gate and source electrodes. In addition, the synaptic memory functionality of the device, governed by charge trapping at the channel/dielectric interface, enables 2048 distinct conductance states (11-bit precision) for short-term memory with a high linearity factor of 0.92 and ultra-low energy consumption (∼2.13 fJ), while supporting programmable logic-state modulation through long-term memory. The proposed fully transparent synaptic transistor-based ternary logic device, integrating both logic and memory functions, lays the foundation for simplified, energy-efficient, and versatile in-memory computing architectures.
- Keyword
- Channel/dielectric interface, Fowler–Nordheim tunneling, Logic-in-memory, Multivalued logic, Synaptic transistors, Transparent electronics