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High Efficiency Ku-band GaN Power Amplifier MMIC for MUAV Data Link Systems
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- Authors
- Youn Sub Noh, Hyung Seok Lee, Sung-Bum Bae
- Issue Date
- 2025-11
- Citation
- Photonics and Electromagnetics Research Symposium - Fall (PIERS-Fall) 2025, pp.1-3
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A Ku-band high efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) has been developed using 0.15μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The power amplifier MMIC for medium-altitude unmanned aerial vehicle (MUAV) data link systems exhibits 45∼45.4dBm output power and 36.7∼39% power added efficiency (PAE) over the frequency range of 13.75 GHz to 14.75 GHz at a drain voltage of 24 V.
- KSP Keywords
- 5 GHz, Drain voltage, Frequency range, GaN Power Amplifier, Gallium nitride (gan), High-electron mobility transistor(HEMT), Ku-Band, Link systems, Microwave Integrated Circuits(MICs), Microwave monolithic integrated circuits(MMIC), Output power