BROWSE
Detail
Journal Article
3-dB Bandwidth extended InGaAs PIN photodiode by inductive CPW electrode for datacenter applications
Cited 0 time in 
Share 
Share
- Authors
- Shinmo An, Duk-Jun Kim, Seok-Jun Yun, Dong-Hun Lee, Young-Tak Han
- Issue Date
- 2026-02
- Citation
- Optics Express, v.34, no.4, pp.7068-7076
- ISSN
- 1094-4087
- Publisher
- Optica Publishing Group (formerly OSA)
- Language
- English
- Type
- Journal Article
- Abstract
- We report on a 3-dB bandwidth extension technique achieved through a coplanar waveguide (CPW) electrode design that imposes inductive gains in a backside-lens-integrated InGaAs positive-intrinsic-negative (PIN) photodiode. The inductive CPW electrodes are analyzed in detail using an equivalent circuit model in which the transit time of the photo-generated carriers has been included. The transit times for the electrons and holes have been analyzed numerically. By including the transit time effect in the equivalent circuit model, the extracted RLC parameters show a good consistency with measured frequency response data. As a result, the 3-dB bandwidth has been extended from 48 GHz to over 67 GHz at a -2.5 V bias voltage simply by reconfiguring the CPW electrode design.
- KSP Keywords
- 3-dB bandwidth, Bias voltage, Coplanar Waveguide Feeding(CPW), Electrode Design, Equivalent Circuit model, Frequency response data, InGaAs PIN, Measured frequency, Photo-generated carriers, Pin photodiode, RLC parameters