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Journal Article
Threshold-Voltage Modulation and N2O Plasma Passivation for Enhanced Retention and Memory Window in Capacitorless 2T0C DRAM Oxide Thin-Film Transistors
- Authors
- Chahwan Yang, Mirinae Lee, Junghoon Han, Sooji Nam
- Issue Date
- 2026-03
- Citation
- Advanced Science, v.Early Access, pp.1-9
- ISSN
- 2198-3844
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- Capacitorless two-transistor-zero-capacitor (2T0C) dynamic random-access memories (DRAMs) offer scalability, simplified processing, and design flexibility by eliminating storage capacitors. We propose 2T0C DRAMs using aluminum-doped indium tin zinc oxide (Al:ITZO) thin-film transistors (TFTs) that enhance both retention time and memory window through device-level engineering. To suppress off-state leakage, N
2 O plasma treatment was applied, which enabled fine-tuning the threshold voltage (Vth ) control via oxygen vacancy reduction, as confirmed by XPS analysis. Additionally, by adjusting the channel width-to-length (W/L) ratio of the read transistor (RTR), three key objectives were achieved. First, the write transistor (WTR) Vth was also engineered to enable hold-state operation at 0 V write word line (WWL), enabling ultra-low-power operation. Second, optimization of the RTR W/L ratio effectively suppressed charge loss, resulting in significantly improved retention characteristics. Third, the memory window was maximized by balancing the intrinsic trade-off between the RTR Vth and on-current (I on ). As a result, we achieved retention times exceeding 1000 s and a ∼13-fold increase in memory window. These results demonstrate the feasibility of Al:ITZO-based 2T0C DRAMs for next-generation memory systems with improved scalability and energy efficiency.
- Keyword
- Al:ITZO, capacitorless 2T0C DRAM, memory window, retention, threshold voltage
- KSP Keywords
- Aluminum-doped, Channel Width, Design flexibility, Energy efficiency, Fine-tuning, Memory System, Next-generation, Oxygen vacancy, Plasma passivation, Storage Capacitors, Thin-Film Transistor(TFT)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
