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Journal Article
Electrode-Modulated oxygen defect profiles in intentionally oxidized chalcogenide ovonic threshold switch selectors
- Authors
- MiRiNae Lee, Jung Hoon Han, Chahwan Yang, Kyunghee Choi, Sooji Nam
- Issue Date
- 2026-07
- Citation
- Applied Surface Science, v.735, pp.1-9
- ISSN
- 0169-4332
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- In the push for next-generation memory technologies, crossbar selector devices play a critical role in suppressing sneak-path currents and enabling three-dimensional integration. This study investigates the operation of ovonic threshold switch devices based on Se-alloyed TeOx, focusing on how interfacial oxidation and electrode materials influence the switching behavior. A small amount of oxygen was intentionally incorporated during the deposition step, enabling stable selector operation without the need for additional dopants. Devices fabricated with Pt, W and Cr electrodes exhibited threshold switching with sub-50 ns responses and selectivity exceeding 103, with Pt delivering the best endurance (>103 cycles). In contrast, Ti, Ni and Al electrodes formed interfacial oxide layers, as confirmed by cross-sectional transmission electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy, leading to resistive random-access memory-like behavior or switching failures. Optimal performance was consistently observed at a specific Se sputtering power (10 W), corresponding to low areal density and improved film uniformity, as verified by X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, atomic force microscopy, and Raman spectroscopy. These findings demonstrate that selector performance capabilities are governed not only by the active-layer composition but also by electrode-induced interfacial defects. This work offers concrete design guidelines for reliable, low-voltage selector integration in future high-density memory architectures.
- Keyword
- Oxidized Ovonic Threshold Switch, Selector, Via-hole type
- KSP Keywords
- Active Layer, Al electrode, Areal density, Atomic force microscope(AFM), Electron Energy Loss Spectroscopy(EELS), Electron microscopy(SEM), Energy dispersive X-ray(EDX), Energy loss spectroscopy(ELS), Energy-dispersive X-ray spectroscopy, Film uniformity, Hole type
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
