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S/X-band용 AlGaN/GaN HEMT 소자의 특성
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- Issue Date
- 2010-06
- Citation
- 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- The fabrication method and the performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) for S/X-band Applications were presented. The fabricated AlGaN/GaN HEMT with a gate length of 0.5㎛ and a total gate width of 300㎛ exhibited a maximum transconductance of 305mS/㎜ and a drain saturation current of 180㎃, respectively. The cut-off frequency(fSUBT/SUB) and the maximum frequency of oscillation (fSUBmax/SUB), measured at VSUBds/SUB = 8V, were 31㎓ and 53㎓, respectively. The AlGaN/GaN HEMT also shows a maximum output power density of 2.3W/㎜ at 2.4㎓ and 1.8W/㎜ at 10㎓. For the fabricated AlGaN/GaN HEMT with a gate length of 0.25㎛ and a total gate width of 100㎛, the cut-off frequency(fT) and the maximum frequency of oscillation (fmax), measured at VSUBds/SUB = 8V, were 39㎓ and 120㎓, respectively.
- KSP Keywords
- AlGaN/GaN HEMTs, Drain saturation current, Fabrication method, Gate Width, High-electron mobility transistor(HEMT), Maximum Frequency, Output power density, X-band applications, cutoff frequency, gate length, maximum output power