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Thermally Stable, Low-Resistance Source/Drain Contacts in a-IGZO TFTs Using an Indium Interlayer
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- Authors
- Hoseok Lee, Heetae Kim, Heesu Kim, Chihun Sung, Jeho Na, Bada Kim, Sung Haeng Cho, Byung Jin Cho
- Issue Date
- 2026-04
- Citation
- IEEE Electron Device Letters, v.47, no.5, pp.937-940
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- This work presents indium interlayer insertion at the source/drain contacts of amorphous In-Ga-Zn-O (a-IGZO) TFTs to improve thermal stability under high temperatures to up 450°C. The indium interlayer not only effectively suppresses specific contact resistivity (ρc) degradation after a high temperature annealing but also further reduces it. The fabricated a-IGZO TFTs with the indium interlayer as a contact buffer in the source/drain contacts could maintain their electrical properties without any degradation even after post annealing at a temperature of 450°C.
- Keyword
- a-IGZO, indium interlayer, specific contact resistivity, thermal stability, thin-film transistor