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Structural Evolution and Critical Limit of Cu Incorporation in Bi2Se3 Thin Films
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- Authors
- Suji Lee, Dae-Hyung Cho, Tae-Ha Hwang, Yong-Duck Chung, Woo-Jung Lee
- Issue Date
- 2026-04
- Citation
- 한국물리학회 학술 논문 발표회 (봄) 2026, pp.1-1
- Publisher
- 한국물리학회
- Language
- English
- Type
- Conference Paper
- Abstract
- Cu intercalation into the van der Waals gaps of Bi2Se3 has been reported to induce superconductivity, attracting significant attention as a promising system for topological superconductivity. However, the incorporation behavior of Cu strongly depends on growth and doping conditions, and Cu can also occupy substitutional Bi sites in addition to intercalation. Such distinct incorporation pathways may influence lattice order and crystallinity, thereby modifying the electronic environment relevant to superconducting and topological behavior. In this study, Cu-doped Bi2Se3 thin films were fabricated under systematically varied Cu doping conditions, and their structural and chemical characteristics were investigated using Raman spectroscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. At low Cu doping levels, the layered structure of Bi2Se3 and Raman-active phonon modes were well preserved, indicating dominant Cu intercalation. In contrast, increased Cu doping led to a gradual suppression of Raman peaks, accompanied by reduced crystalline order and enhanced substitution-related disorder. These results demonstrate that excessive Cu incorporation induces structural degradation prior to the formation of a superconducting state, highlighting a critical limit of Cu incorporation in Bi2Se3 thin films. This work provides physical guidelines for optimizing Cu incorporation behavior toward topological superconductor research.
- KSP Keywords
- Chemical characteristics, Cu doping, Cu incorporation, Cu-doped, Electron microscopy(SEM), Lattice order, Layered structure, Structural degradation, Structural evolution, Superconducting state, Transmission Electron Microscopy(TEM)