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우주항공용 650V SiC MOSFET 기밀성 패키지 및 방사선 평가 결과
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- Issue Date
- 2026-06
- Citation
- 대한전자공학회 학술 대회 (하계) 2026, pp.162-165
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- Recently, low Earth orbit (LEO) satellite systems for aerospace applications have demanded semiconductor devices and packaging technologies with high resistance to harsh external environments, such as extreme temperature fluctuations, mechanical shocks during launch, and cosmic radiation. The Silicon Carbide (SiC) power semiconductors proposed in this study possess higher power density and efficiency compared to conventional Silicon (Si) devices. These characteristics are advantageous for achieving high performance and lightweight systems, making them ideal for aerospace environments where strict weight constraints are essential to maximizing operational endurance. Hermetic packaging technology, which protects SiC devices in space, is a critical requirement. By utilizing materials with superior thermal conductivity and blocking external factors such as moisture, contamination, and radiation, this technology extends device lifespan and ensures stable performance. To date, power semiconductors for satellites have relied heavily on imported devices and components. In this paper, we present the localized development of a 650 V, 27 mΩ SiC MOSFET as a core component for LEO satellite Electric Power Systems (EPS). We describe the electrical characteristics and radiation impact evaluations measured after fabricating these as discrete devices based on hermetic packaging.
- KSP Keywords
- Cosmic radiation, Electric power systems, Extreme temperature, High performance, High resistance, Low earth orbit (LEO) satellite, Packaging technology, Power Density, Power semiconductor, SiC MOSFET, SiC device