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Conference Paper
Upper-Mid band에서 동작하는 CMOS 저잡음 증폭기
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- Issue Date
- 2026-06
- Citation
- 대한전자공학회 학술 대회 (하계) 2026, pp.1-4
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- This paper presents a low-noise amplifier (LNA) for upper-mid band 6G wireless communication systems implemented in a 65-nm CMOS process. The proposed architecture consists of a single-ended first stage and a differential second stage employing transformer-based input, inter-stage, and output matching networks. A self-transformer and source degeneration inductor are utilized at the input stage to achieve simultaneous input impedance matching, low noise figure, and enhanced stability. In addition, a tunable MOS capacitor incorporated into the inter-stage transformer network enables frequency tuning by adjusting the resonance characteristics.
- KSP Keywords
- CMOS Process, First stage, Frequency tuning, Impedance matching, Inter-stage, Low noise figure, Low-noise amplifier(LNA), MOS capacitor, Resonance characteristic, Single-Ended, Source degeneration