본 논문에서는 능동위상배열 레이더용 Ku-대역 전
력증폭기 칩을 0.25 μm p-HEMT 상용공정을 이용하
여 개발하였다. 1:2.5:5 HEMT 크기 비율의 3단 증폭
구조로 설계된 칩은 Lange-coupler를 이용한 밸런스
드 구조로 설계되어 입출력 반사손실 특성이 우수하다
는 특징을 가진다. 3.7 mm x 2.2 mm 칩 크기로 제
작된 MMIC 전력증폭기는 15.7 ~ 17.2 GHz 주파수
대역에서 29 dB의 소신호 이득과 –20 dB 이하의 입
출력 반사손실과 31.8 dBm의 최대출력 파워 특성을
보였으며 38% PAE의 고효율 특성과 31 dBm P1dB의
고선형 특성을 보였다.
Keyword
High Efficiency(고효율), Ku-band(Ku-대역), MMIC, Power Amplifier(전력증폭기), radar(레이더)
KSP Keywords
2 mm, 7 mm, GaAs MMIC, high efficiency, ku-band, power amplifiers(PAs), pseudomorphic high electron mobility transistor(pHEMT)
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