상세정보
학술대회
SiGe BiCMOS Chip Sets for Use in an X-Band Multi-function Chip
- 발행일
- 201006
- 출처
- International Conference on Advances in Satellite and Space Communications (SPACOMM) 2010, pp.25-30
- 협약과제
- 10MR1700, 통해기위성 Ka대역 통신탑재체 우주인증 및 실용화 검증기술 개발, 안도섭
- 초록
- SiGe Radio Frequency Integrated Circuits have been designed and fabricated for use in the X-band Si-based multi-function chip, which is known as a core-chip for a Transmit/Receive module of a phased array radar systems. In this paper, six kinds of Radio Frequency Integrated Circuits will be presented such as a power amplifier, a digital serial-to-parallel converter, a Single-Pole-Double-Throw switch, an 8 dB attenuator, a 16 dB attenuator, and a 45 degree phase shifter. The power amplifier based on a cascode configuration using SiGe HBTs shows the Radio Frequency performance of the 12 dB gain and 19 dBm P1dB. The other five chips have been designed using 0.25 um Complementary Metal-Oxide Semiconductor technology. The digital serial-to-parallel converter shows the perfect functional operation to 20 MHz clock. The Single-Pole-Double- Throw switch, the 8 dB and 16 dB attenuations, and the 45 degree phase shifter show good Radio Frequency performances. The most of chip sizes are very small to be lower than 1 mm2. These chip sets may make an attractive solution for a high power X-band multi-function chip for a T/R module of a phased array radar system. © 2010 IEEE.
- KSP 제안 키워드
- Complementary metal-oxide-semiconductor(CMOS), Core-Chip, High power, Metal-oxide(MOX), Multi-function chip(MFC), Phase Shifter, Phased Array Radar System, Radio Frequency(RF), Radio Frequency integrated circuits, Semiconductor technology, Serial-to-parallel converter