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Geometry Optimization of GaAs Antiparallel Schottky Barrier Diode for 300 GHz Subharmonic Mixer
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- Authors
- Dong Woo Park, Young–Ho Kim, Jun–Hwan Shin, Da–Hye Choi, Eui Su Lee, Il–Min Lee, Kyung Hyun Park
- Issue Date
- 2026-06
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2026, pp.1-1
- Publisher
- 대한물리학회
- Language
- English
- Type
- Conference Paper
- Abstract
- This study investigates the design and fabrication of a GaAs antiparallel Schottky barrier diode (AP-SBD) for a 300 GHz subharmonic mixer. We modeled the AP-SBD structure using electromagnetic analysis and I-V measurements of the device to reduce complex parasitic elements in the THz band. We measured the optical material properties relevant to the actual operation in the THz range to enhance the reliability of the model. We identified the parasitic elements and optimized the device structure to minimize their impact by analyzing the impedance when the SBD was turned ON from 10 to 300 GHz. Consequently, we designed a GaAs AP-SBD with a characteristic impedance of approximately 50 Ω in the frequency range of 150-300 GHz. Electrical characterization of the fabricated diode revealed a series resistance and total capacitance of 11 Ω and 21 fF, respectively. To reduce the impedance uncertainties, we employed wire-free processes to produce the subharmonic mixer. Finally, the measured single- sideband conversion loss was 9.72 dB near 300 GHz and the 3 dB bandwidth extended by approximately 40 GHz from 280 GHz to 320 GHz, validating the correctness of our design and fabrication methodology.
- KSP Keywords
- 300 GHz, Conversion loss, Design and fabrication, Device structure, Electrical characterization, Frequency Range, Geometry optimization, I-V measurements, Initialization Vector(IV), Optical materials, THz band