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Trap-modulated all-in-one neuromorphic transistor fabricated via PEALD for integrated neuronal and synaptic functionality
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- Authors
- Jaehee Lee, Youngbin Yoon, Jung Wook Lim
- Citation
- Journal of Materials Chemistry C, Early Access
- ISSN
- 2050-7534
- Publisher
- Royal Society of Chemistry
- Language
- English
- Type
- Journal Article
- Abstract
- Neuromorphic hardware that emulates neuronal firing and synaptic plasticity within a single device is essential for compact, energy-efficient, and biologically relevant computing systems. This study introduces an all-in-one oxide semiconductor neuromorphic transistor fabricated employing plasma-enhanced atomic layer deposition, which integrates volatile neuronal and nonvolatile synaptic functionalities in a unified three-terminal architecture. The device features a TiO2 channel coupled with a dual-gate dielectric stack of Al2O3 and charge-inducing dielectric (CID), where trap-mediated charge dynamics at the CID/TiO2 interface govern neuromorphic behavior. By systematically modulating the gate read voltage, pulse amplitude, and temporal input conditions, the device demonstrates a reversible and deterministic transition between neuron-like spiking behavior and synaptic conductance modulation. Neuronal firing occurs under shallow-trap occupation and rapid carrier relaxation, whereas synaptic plasticity prevails when deep traps are filled, enabling stable nonvolatile conductance updates. Comprehensive state mapping reveals four operational regimes determined by the interplay between electrical biasing and input pulse frequency: neuron, synapse, transition, and no response. Notably, frequency-only modulation under fixed-bias conditions enables biologically relevant switching between neuronal and synaptic modes. Therefore, simple electrical control of trap occupation enables multifunctional neuromorphic behavior within a single complementary metal-oxide-semiconductor-compatible transistor, offering a promising pathway toward highly integrated, scalable neuromorphic hardware systems.
- KSP Keywords
- All-in-one, Carrier relaxation, Complementary metal-oxide-semiconductor(CMOS), Coupled with, Deep traps, Electrical control, Metal-oxide(MOX), Neuronal Firing, Plasma-enhanced atomic layer deposition, Pulse Frequency, Single device