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Conference Paper
Investigation of Single-Event Burnout Robustness in 1.2 kV SiC Power Devices with Various Edge Termination Structures Under Proton Irradiation
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- Authors
- Sangyeob Kim, Jeongtae Kim, Dong-Seok Kim, Hyuncheol Bae, Ogyun Seok
- Issue Date
- 2026-09
- Citation
- European Solid-State Electronics Research Conference (ESSERC) 2026, pp.189-192
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- Single-event burnout (SEB) in 1.2 kV SiC power devices with various edge termination structures was investigated under proton irradiation. Ring-assisted junction termination extension (RA-JTE), multiple floating zone JTE (MFZ-JTE), and field-limiting rings (FLR) were evaluated using leakage monitoring under reverse-bias conditions. Burnout was predominantly observed when the applied reverse bias exceeded 1.1 kV across the tested structures, except for a single RA-JTE device that exhibited no burnout at 1320 V. Simulation results indicate that SEB susceptibility is governed by where the peak electric field forms during an event with the most vulnerable cases associated with peak electric field formation near the main junction. In RA-JTE, the peak electric field tends to shift toward the main junction side from the irradiation point. These findings emphasize that protecting the main junction is critical for improving edge termination robustness against proton induced SEB.
- Keyword
- SiC; Single Event Burnout (SEB); Edge Termination; Proton Irradiation
- KSP Keywords
- Junction Termination Extension(JTE), Proton Irradiation, Reverse bias, SiC power devices, Single event burnout(SEB), edge termination, floating zone, leakage monitoring, peak electric field, simulation results