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Conference Paper
The Thickness Effect of SiOx Layer in CIGS Thin-Film Solar Cells Fabricated on Stainless-Steel Substrate
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- Authors
- Y. D. Chung, D. H. Cho, W. S. Han, N. M. Park, K. S. Lee, S. Y. Oh, J. Kim
- Issue Date
- 2010-06
- Citation
- Photovoltaic Specialists Conference (PVSC) 2010, pp.3401-3402
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- We have investigated the thickness effect of SiOx layer in the CIGS thin-film solar cells fabricated on stainless-steel substrate. After a SiOx layer with a thickness of 1 or 2-μm was deposited on the substrate by using plasma-enhanced chemical vapor deposition, Na-doped Mo layer and Mo layer were coated on it. A CIGS thin-film solar cell on the stainless-steel substrate without the SiOx layer showed an efficiency of 7.47 %, the solar cell with the 1 μm-thick SiOx showed an efficiency of 11.82 %, and the solar with the 2 μm-thick SiOx showed the efficiency of 12.43%. The efficiency of CIGS solar cell with 2 μm-thick SiOx was higher than those of others with the thinner SiOx barrier. © 2010 IEEE.
- KSP Keywords
- CIGS solar cell, Na-doped Mo, Plasma-enhanced chemical vapor deposition(PECVD), Stainless steel(SUS316), Stainless steel substrate, Thin film solar cells, thickness effect, thin film(TF)