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학술대회 The Thickness Effect of SiOx Layer in CIGS Thin-Film Solar Cells Fabricated on Stainless-Steel Substrate
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저자
정용덕, 조대형, 한원석, 박래만, 이규석, 오수영, 김제하
발행일
201006
출처
Photovoltaic Specialists Conference (PVSC) 2010, pp.3401-3402
DOI
https://dx.doi.org/10.1109/PVSC.2010.5614680
협약과제
09MB7800, 고효율 장수명 Flexible CIGS 박막 태양전지 및 모듈 양산기술개발, 김제하
초록
We have investigated the thickness effect of SiOx layer in the CIGS thin-film solar cells fabricated on stainless-steel substrate. After a SiOx layer with a thickness of 1 or 2-μm was deposited on the substrate by using plasma-enhanced chemical vapor deposition, Na-doped Mo layer and Mo layer were coated on it. A CIGS thin-film solar cell on the stainless-steel substrate without the SiOx layer showed an efficiency of 7.47 %, the solar cell with the 1 μm-thick SiOx showed an efficiency of 11.82 %, and the solar with the 2 μm-thick SiOx showed the efficiency of 12.43%. The efficiency of CIGS solar cell with 2 μm-thick SiOx was higher than those of others with the thinner SiOx barrier. © 2010 IEEE.
KSP 제안 키워드
CIGS solar cell, Na-doped Mo, Plasma-enhanced chemical vapor deposition(PECVD), Stainless steel(SUS316), Stainless steel substrate, Thin film solar cells, thickness effect, thin film(TF)