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Junction formation at the interface of CdS/CuInxGa(1-x)Se2
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- Authors
- Soon Mi Park, Tae Gun Kim, Yong Duck Chung, Dae-Hyung Cho, Jeha Kim, Kyung Joong Kim, Yeonjin Yi, Jeong Won Kim
- Issue Date
- 2014-08
- Citation
- Journal of Physics D : Applied Physics, v.47, no.34, pp.1-8
- ISSN
- 0022-3727
- Publisher
- Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- The interfacial band alignment and chemical composition at the cadmium sulfide (CdS)/copper indium gallium diselenide (CuInx Ga1-x Se2 : CIGS) heterojunction was investigated by photoelectron spectroscopy. Over the two different interfaces made by either thermal deposition of CdS on a CIGS film or step-by-step etching of a chemical-bath deposited (CBD)-CdS/CIGS film by Ar+ ions, the valence band maximum and conduction band minimum were determined using ultraviolet photoelectron spectroscopy and inverse photoemission spectroscopy, respectively. Concurrently, x-ray photoelectron spectroscopy was used to trace chemical changes across the interface. Both interfaces showed a In-rich and Cu-deficient profile. The thermal deposition of CdS on CIGS induces Cd-Cu intermixing and nonstoichiometric CdS formation associated with a strong band bending and high electron injection barrier. However, the CBD-CdS layer shows a rather sharp interface and negligible electron injection barrier in the conduction band, which will show better solar cell characteristics. © 2014 IOP Publishing Ltd.
- KSP Keywords
- CIGS film, CdS formation, Chemical changes, Cu-deficient, High electron, In-rich, Sharp interface, Solar Cells, Step-by-step, Valence band maximum, X-ray Photoelectron Spectroscopy