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Device Characteristics of Inkjet-Printed ZnO TFTs by Solution Process
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- Authors
- Sang Chul Lim, Jae Bon Koo, Chan Woo Park, Soon-Won Jung, Bock Soon Na, Sang Suk Lee, Hye Yong Chu
- Issue Date
- 2014-05
- Citation
- Japanese Journal of Applied Physics, v.53, no.5S3, pp.1-5
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We report on solution-processed n-channel ZnO thin-film transistors. We fabricated by a low-temperature process to improve their performance using inkjet printing under various conditions. The resulting films were inkjet-printed with a resolution 200 dpi using droplets of 50μm diameter and 35pl volume. The characteristics of the inkjet-printed TFTs were improved significantly at an annealing temperature of 150 °C. The field-effect mobility, Vth, and on/off current ratio were 3.03 cm2 V-1 s-1, -3.3V, and 106, respectively. These results indicate that annealing at 150°C is sufficient to obtain a mobility (μsat) as large as 3.03 cm2 V-1 s- 1. © 2014 The Japan Society of Applied Physics.
- KSP Keywords
- Annealing temperature, Applied physics, Device characteristics, First Stokes(S1), Low temperature(LT), Low-temperature process, N-channel, ON/OFF current ratio, Solution-processed, Thin-Film Transistor(TFT), Various conditions