상세정보
학술지
Device Characteristics of Inkjet-Printed ZnO TFTs by Solution Process
- 발행일
- 201405
- 출처
- Japanese Journal of Applied Physics, v.53 no.5S3, pp.1-5
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 13VB1900, 에너지 절감을 위한 7인치기준 2W급 환경적응 디스플레이 신모드 핵심 원천 기술 개발, 추혜용
- 초록
- We report on solution-processed n-channel ZnO thin-film transistors. We fabricated by a low-temperature process to improve their performance using inkjet printing under various conditions. The resulting films were inkjet-printed with a resolution 200 dpi using droplets of 50μm diameter and 35pl volume. The characteristics of the inkjet-printed TFTs were improved significantly at an annealing temperature of 150 °C. The field-effect mobility, Vth, and on/off current ratio were 3.03 cm2 V-1 s-1, -3.3V, and 106, respectively. These results indicate that annealing at 150°C is sufficient to obtain a mobility (μsat) as large as 3.03 cm2 V-1 s- 1. © 2014 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Annealing temperature, Applied physics, Device characteristics, First Stokes(S1), Low temperature(LT), Low-temperature process, N-channel, ON/OFF current ratio, Solution-processed, Thin-Film Transistor(TFT), Various conditions