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A new vertical GaN SBD employing in-situ metallic gallium ohmic contact
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- Authors
- Ji Yong Lim, O Gyun Seok, Young-Shil Kim, Min-Koo Han, Min Ki Kim
- Issue Date
- 2011-05
- Citation
- International Symposium on Power Semiconductor Devices (ISPSD) 2011, pp.247-250
- Language
- English
- Type
- Conference Paper
- Abstract
- We proposed and fabricated new vertical GaN Schottky barrier diodes (SBDs) employing in-situ metallic gallium (Ga) ohmic contacts which increase the forward current of a vertical GaN SBD considerably. Highly conductive metallic Ga was formed in-situ at the bottom of n+ GaN substrate due to a high thermal budget during n-epi layer growth so that the ohmic contact was well-formed due to the metallic Ga. The forward current density of the proposed device was 625 A/cm2 at 2 V while that of the conventional device was 300 A/cm 2. We also employed the floating metal ring and field plate to achieve the high breakdown voltage. The breakdown voltage of the proposed and conventional device was 880 V and 850 V respectively. © 2011 IEEE.
- KSP Keywords
- Field plate, Forward current, GaN substrate, High breakdown voltage, In-Situ, Metal ring, Thermal budget, Vertical GaN, current density, floating metal, highly conductive