상세정보
학술지
Electrical Properties of Solution-Deposited ZnO Thin-Film Transistors by Low-Temperature Annealing
- 발행일
- 201411
- 출처
- Journal of Nanoscience and Nanotechnology, v.14 no.11, pp.8665-8670
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 초록
- Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 °C. The field effect mobility. Vth and the on/off current ratios were 3.03 cm2/Vs, - 3.3 V, and 104, respectively. These results indicate that annealing at 150 °C 1 h is sufficient to obtain a mobility (μsat) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.
- KSP 제안 키워드
- 1 H, 3 V, Active Layer, Annealing atmosphere, Annealing temperature, Driving forces, High performance, Low temperature(LT), Low-cost, Low-temperature process, N-channel