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Conference Paper
A Wideband CMOS Supply Modulator Delivering 32dBm Peak Output Power for a Class 3 LTE Envelope Tracking Transmitter
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- Issue Date
- 2011-06
- Citation
- International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2011, pp.289-292
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A supply modulator for an LTE class 3 Envelope-Tracking (ET) transmitter is designed and develop using a 0.35um CMOS process. It consists of mainly two amplifiers of class D switching and class AB linear amplifiers for high efficiency and wideband operation which is previously called hybrid switching amplifier (HSA). The control signal for the high efficiency class-D switching amplifier is generated by hysteretic comparator and current sensing circuits. To process an input envelope signal with high PAPR like LTE OFDM signal, rail-to-rail input stage is adopted in the broadband linear amplifier. The modulator can deliver output power up to 32.1dBm to a 3.25ohm resistive load at peak efficiency of 89.8% and shows good amplitude tracking performance with LTE envelope signal with PAPR 7.6dB.
- KSP Keywords
- CMOS Process, Class AB(CAB), Control Signal, Efficiency class, Envelope signal, High PAPR, Hybrid Switching Amplifier, OFDM signals, Output power, Peak efficiency, Resistive load