상세정보
학술대회
Chalcogenide Programmable Switches with SiGeSb Heating Layers
- 저자
- 이승윤, 정선, 윤성민, 박영삼
- 발행일
- 201108
- 출처
- International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) 2011, pp.2405-2408
- 협약과제
- 11ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 지경용
- 초록
- This work reports on the switching behavior of chalcogenide programmable switches employing SiGeSb alloys as resistive heating layers. The sputter-deposited SiGeSb layers, prepared to contact with GeSbTe chalcogenide alloys in an indirect heating structure, induced temperature rise and phase transition in the GeSbTe alloys. While the electrical resistance of the SiGeSb layers decreased with increasing annealing temperature, it became saturated at the antimony concentration in the SiGeSb layers higher than 28 atomic percent. The fabricated switch devices exhibited on-off switch characteristic between high resistive and low resistive states, and their switching behavior was remarkably influenced by the SiGeSb heater resistance depending on the annealing temperature and the amount of antimony atoms. © 2011 Elsevier B.V.
- KSP 제안 키워드
- Annealing temperature, Chalcogenide alloys, Electrical Resistance, GeSbTe chalcogenide, Heating layers, Indirect heating, On-off switch, Phase transition, Programmable switches, Sputter-deposited, Switching behavior