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Design of 220 GHz-band Amplifier Using InP HEMT Technology
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- Authors
- Woo Jin Chang, Jong-Won Lim, Ho-Kyun Ahn, Hae Cheon Kim, Jae-Kyoung Mun
- Issue Date
- 2011-06
- Citation
- International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2011, pp.1120-1122
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper introduces the design of a 220 GHz band 5-stage amplifier for high resolut passive THz imaging systems. The amplifier circuit has been designed using 50 nm gate length InP high electron mobility transistor (HEMT) technology. the 220 GHz amplifier design, it has been used microstrip-coupled lines for improving prevent an oscillation problem and more gain than amplifier although it has the same devices. designed 220 GHz-band 5-stage small signal gain of 12~14 dB, an input return loss of -15~-8 dB, an output return loss o input voltage standing wave ratio of 1.4~2.3, and an output voltage standing wave ratio of 1.1~1.6 217~222 GHz.
- KSP Keywords
- 220 GHz, Amplifier circuit, Coupled line, GHz band, HEMT technology, High electron mobility transistor(HEMT), InP HEMT, Input return loss, Input voltage, Output Voltage, Return loss(RL)