상세정보
학술지
Postfabrication Annealing Effects on Insulator-Metal Transitions in VO2 Thin-Film Devices
- 발행일
- 201411
- 출처
- ACS Applied Materials & Interfaces, v.6 no.22, pp.19718-19725
- ISSN
- 1944-8244
- 출판사
- American Chemical Society(ACS)
- 초록
- (Figure Presented) In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.
- KSP 제안 키워드
- Annealing effects, Hysteresis measurements, Reducing atmosphere, Thermal characteristic, Transition Point, X-ray photoelectron spectroscopy (xps), device fabrication, insulator-metal transition, metal-insulator transition, sheet resistance, thin film(TF)