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학술지 Postfabrication Annealing Effects on Insulator-Metal Transitions in VO2 Thin-Film Devices
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저자
Servin Rathi, In-yeal Lee, 박진형, 김봉준, 김현탁, 김길호
발행일
201411
출처
ACS Applied Materials & Interfaces, v.6 no.22, pp.19718-19725
ISSN
1944-8244
출판사
American Chemical Society(ACS)
DOI
https://dx.doi.org/10.1021/am5046982
초록
(Figure Presented) In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.
KSP 제안 키워드
Annealing effects, Hysteresis measurements, Reducing atmosphere, Thermal characteristic, Transition Point, X-ray photoelectron spectroscopy (xps), device fabrication, insulator-metal transition, metal-insulator transition, sheet resistance, thin film(TF)