상세정보
학술지
A 10 × 10 Gb/s DFB Laser Diode Array Fabricated Using a SAG Technique
- 발행일
- 201404
- 출처
- Optics Express, v.22 no.8, pp.9073-9080
- ISSN
- 1094-4087
- 출판사
- Optical Society of America(OSA)
- 협약과제
- 13VB1700, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
- 초록
- We present a ten-channel distributed feedback laser diode array (DFB-LDA) developed for the transmission of 100-Gb/s (10 × 10 Gb/s) signals separated by an 8 nm wavelength grid at a center wavelength of 1.55 μm. For the fabrication of this type of laser array, a selective area growth (SAG) technique, electron-beam lithography, and a reverse-mesa ridge waveguide LD processing technique were adopted to offer a tailored gain spectrum to each channel, providing both accurate lasing-wavelength control and excellent single-mode yield over all channels, and reducing the fabrication cost and electrical and thermal resistances. To evaluate the operational performance of the fabricated chip systematically, we also developed a sub-assembly module containing a ten-channel ?/4-shifted DFB-LDA, ten matching resistors, flexible printed circuit board (FPCB) wiring, and a thermistor on a metal optical bench. The static and dynamic properties of all channels of the fabricated array are examined in this paper. The developed sub-assembly module shows a side-mode suppression ratio (SMSR) of > 50 dB, a modulation bandwidth of > 10 GHz, and a clear eyeopening before and after a 2-km transmission with dynamic extinction ratio of > 5 dB.©2013 Optical Society of America.
- KSP 제안 키워드
- 10 Ghz, Center wavelength, DFB laser, Distributed feedback laser diode, Distributed feedback lasers(DFBs), Flexible printed circuit board(FPCB), Gain spectrum, Laser array, Laser diode(LD), Laser diode array, Modulation bandwidth