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Drain Bias Induced Instability Characteristics in Oxide Thin Film Transistors
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- Authors
- Shin Hyuk Yang, Jun Yong Bak, Sung-Min Yoon, Min Ki Ryu, Him Chan Oh, Chi-Sun Hwang, Sang-Hee Ko Park, Jin Jang
- Issue Date
- 2011-10
- Citation
- International Meeting on Information Display (IMIT) 2011, pp.115-116
- Language
- English
- Type
- Conference Paper
- Abstract
- We fabricated IGZO TFTs with staggered structure on a glass substrate. The device exhibited saturation mobility of 16.45 cm 2 /Vs, threshold voltage of 0.72 V. We applied gate, drain, and gate/drain bias stress to the device to study about the instability phenomena in the oxide TFTs. Although the device showed highly stable characteristics (<0.1 V) under the positive and negative gate bias stress conditions for 10ks, IGZO TFTs showed drain field induced degradation phenomenon in the transfer curves. We believe that the migration effects in the IGZO active layer is the main reason in the drain field induced instability characteristics.
- KSP Keywords
- AND gate, Active Layer, Drain bias stress, Field-induced, Glass substrate, Highly stable, IGZO TFTs, Instability phenomena, Oxide TFTs, Oxide thin films, Positive and negative