상세정보
학술지
Voltage Switching of a VO2 Memory Metasurface Using Ionic Gel
- 저자
- M. D. Goldflam, M. K. Liu, B. C. Chapler, H. T. Stinson, A. J. Sternbach, A. S. McLeod, J. D. Zhang, K. Geng, M. Royal, 김봉준, R. D. Averitt, N. M. Jokerst, D. R. Smith, 김현탁, D. N. Basov
- 발행일
- 201411
- 출처
- Applied Physics Letters, v.105 no.4, pp.1-4
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 초록
- We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the "off" or "on" state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte-VO2 interface. © 2014 AIP Publishing LLC.
- KSP 제안 키워드
- Control device, Electrochemical effects, Insulating regime, Ionic gel, Negative voltage, Positive and negative, Saturation time, Spatial scales, Voltage application, insulator-to-metal transition, low voltage