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Journal Article Voltage Switching of a VO2 Memory Metasurface Using Ionic Gel
Cited 66 time in scopus Share share facebook twitter linkedin kakaostory
Authors
M. D. Goldflam, M. K. Liu, B. C. Chapler, H. T. Stinson, A. J. Sternbach, A. S. McLeod, J. D. Zhang, K. Geng, M. Royal, Bong-Jun Kim, R. D. Averitt, N. M. Jokerst, D. R. Smith, H-T. Kim, D. N. Basov
Issue Date
2014-11
Citation
Applied Physics Letters, v.105, no.4, pp.1-4
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.4891765
Abstract
We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the "off" or "on" state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte-VO2 interface. © 2014 AIP Publishing LLC.
KSP Keywords
Control device, Electrochemical effects, Insulating regime, Ionic gel, Low voltage, Oxygen migration, Positive and negative, Saturation time, Spatial scales, Vanadium Dioxide, Voltage application