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Voltage Switching of a VO2 Memory Metasurface Using Ionic Gel
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- Authors
- M. D. Goldflam, M. K. Liu, B. C. Chapler, H. T. Stinson, A. J. Sternbach, A. S. McLeod, J. D. Zhang, K. Geng, M. Royal, Bong-Jun Kim, R. D. Averitt, N. M. Jokerst, D. R. Smith, H-T. Kim, D. N. Basov
- Issue Date
- 2014-11
- Citation
- Applied Physics Letters, v.105, no.4, pp.1-4
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the "off" or "on" state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte-VO2 interface. © 2014 AIP Publishing LLC.
- KSP Keywords
- Control device, Electrochemical effects, Insulating regime, Ionic gel, Low voltage, Oxygen migration, Positive and negative, Saturation time, Spatial scales, Vanadium Dioxide, Voltage application