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학술대회
Interface Characteristics of CdS/Cu(In,Ga)Se2 Thin-Film Solar Cells by Photoreflectance Spectroscopy
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- 발행일
- 201112
- 출처
- International Conference on Advanced Materials and Devices (ICAMD) 2011, pp.170-170
- 협약과제
- 11FB1300, 초경량 CIGS 박막 태양전지 공정 기술 개발, 정용덕
- 초록
- We have investigated the CdS/Cu(In,Ga)Se2 interface characteristics of Cu(In,Ga)Se2 (CIGS) thin-film solar cells using photoreflectance spectroscopy and its influence on the photovoltaic performance. We have prepared CIGS solar cells, which had the different methods in fabrication of the chemical-bath-deposited (CBD) CdS layer and CIGS layer, respectively. The thiourea concentration in CBD-CdS process was varied from 0.025 M to 0.1 M. Final In-Ga-Se deposition time in CIGS film deposition was varied from 300 sec. to 490 sec. We have fabricated the thin-film solar cells with the combination of these conditions. The transition energies changed from 2.277 eV to 2.387 eV and the conversion efficiencies changed from 14.13 % to 15.81 % depending on the fabrication process. The formation of different states in CdS/CIGS resulted in different conversion efficiencies as well as different band alignments at the CdS/CIGS interface.
- KSP 제안 키워드
- CIGS film, CIGS layer, CIGS solar cell, CdS/CIGS interface, Conversion efficiency(C.E.), Deposition time, Different methods, Interface characteristics, Photoreflectance spectroscopy, Thin film solar cells, Thiourea concentration