상세정보
학술지
Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests
- 발행일
- 201405
- 출처
- Journal of the Korean Physical Society, v.64 no.10, pp.1446-1450
- ISSN
- 0374-4884
- 출판사
- 한국물리학회
- 협약과제
- 14ZB1400, ESSOP CUBE 기술 기반 차세대 레이더 3D 모듈 개발, 이진호
- 초록
- In this paper, we study the degradation phenomenon and its effect on the lifetime of AlGaN/GaN HEMTs by means of high-temperature operation tests. To estimate the self-heating effect, we performed electrical measurements at several temperatures. Packaged devices were tested at various bias levels and a plate temperature of 150 °C. The lifetime of devices strongly depended on the junction temperature. By means of electrical characterization, the device degradation was demonstrated and evaluated. After the operation test, the drain current and the transconductance were found to be decreased and the threshold voltage was shifted in a positive direction. The leakage current was remarkably decreased. On the basis of the experimental results, the degradation is ascribed to the hot electron effect and to Schottky contact degradation. © 2014 The Korean Physical Society.
- KSP 제안 키워드
- AlGaN/GaN HEMTs, Contact degradation, Drain current, Electrical characterization, Electrical measurements, High-temperature operation, Junction Temperature, Leakage current, Operation test, Schottky contacts, Self-heating effect(SHE)