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Journal Article Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests
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Authors
Jong-Min Lee, Byoung-Gue Min, Cheol-Won Ju, Ho-Kyun Ahn, Jae-Kyoung Mun, Jong-Won Lim, Eunsoo Nam
Issue Date
2014-05
Citation
Journal of the Korean Physical Society, v.64, no.10, pp.1446-1450
ISSN
0374-4884
Publisher
한국물리학회
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.3938/jkps.64.1446
Project Code
14ZB1400, ESSOP CUBE 기술 기반 차세대 레이더 3D 모듈 개발, Lee Jin Ho
Abstract
In this paper, we study the degradation phenomenon and its effect on the lifetime of AlGaN/GaN HEMTs by means of high-temperature operation tests. To estimate the self-heating effect, we performed electrical measurements at several temperatures. Packaged devices were tested at various bias levels and a plate temperature of 150 °C. The lifetime of devices strongly depended on the junction temperature. By means of electrical characterization, the device degradation was demonstrated and evaluated. After the operation test, the drain current and the transconductance were found to be decreased and the threshold voltage was shifted in a positive direction. The leakage current was remarkably decreased. On the basis of the experimental results, the degradation is ascribed to the hot electron effect and to Schottky contact degradation. © 2014 The Korean Physical Society.
KSP Keywords
AlGaN/GaN HEMTs, Contact degradation, Drain current, Electrical characterization, Electrical measurements, High-temperature operation, Junction Temperature, Leakage current, Operation test, Schottky contacts, Self-heating effect(SHE)