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Ku‐band GaN HPA MMIC with high‐power and high‐PAE performances
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- Authors
- Youn Sub Noh, Yun Ho Choi, In-Bok Yom
- Issue Date
- 2014-09
- Citation
- Electronics Letters, v.50, no.19, pp.1361-1363
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- A Ku-band high-power and high-power-added efficiency (PAE) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) is demonstrated with a 0.25 μm gallium nitride (GaN) high electron mobility transistor technology on a silicon carbide substrate. Measured continuous-wave performances for the two-stage HPA in-fixture exhibit 17.5-18.3 W of output power (POUT) and 36.4-39.5% of PAE over the frequency range of 13.5-14.5 GHz. The fabricated two-stage HPA MMIC with all matching networks is as small as 3.3 × 3.5 mm, generating an output power density of 1522 mW/mm2.
- KSP Keywords
- 3.5 mm, 5 GHz, Frequency range, GaN HPA, Gallium nitride (gan), High-electron mobility transistor(HEMT), Ku-Band, Output power density, Power added efficiency(PAE), Two-Stage, continuous wave(CW)