14MR3100, Development of Flexible Payload Technologies for Next Satellite Broadcasting and Communications,
Ahn Jae Young
Abstract
A Ku-band high-power and high-power-added efficiency (PAE) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) is demonstrated with a 0.25 μm gallium nitride (GaN) high electron mobility transistor technology on a silicon carbide substrate. Measured continuous-wave performances for the two-stage HPA in-fixture exhibit 17.5-18.3 W of output power (POUT) and 36.4-39.5% of PAE over the frequency range of 13.5-14.5 GHz. The fabricated two-stage HPA MMIC with all matching networks is as small as 3.3 × 3.5 mm, generating an output power density of 1522 mW/mm2.
KSP Keywords
3.5 mm, 5 GHz, Frequency Range, GaN HPA, High electron mobility transistor(HEMT), High power amplifier(HPA), Integrated circuit, Ku-Band, Output power density, Power added efficiency(PAE), Two-Stage
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