상세정보
학술지
Ku-Band GaN HPA MMIC with High-Power and High-PAE Performances
- 발행일
- 201409
- 출처
- Electronics Letters, v.50 no.19, pp.1361-1363
- ISSN
- 0013-5194
- 출판사
- IET
- 협약과제
- 14MR3100, 차기위성 Flexible 통신방송 탑재체 핵심기술 개발, 안재영
- 초록
- A Ku-band high-power and high-power-added efficiency (PAE) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) is demonstrated with a 0.25 μm gallium nitride (GaN) high electron mobility transistor technology on a silicon carbide substrate. Measured continuous-wave performances for the two-stage HPA in-fixture exhibit 17.5-18.3 W of output power (POUT) and 36.4-39.5% of PAE over the frequency range of 13.5-14.5 GHz. The fabricated two-stage HPA MMIC with all matching networks is as small as 3.3 × 3.5 mm, generating an output power density of 1522 mW/mm2.
- KSP 제안 키워드
- 3.5 mm, 5 GHz, Frequency Range, GaN HPA, High electron mobility transistor(HEMT), High power amplifier(HPA), Integrated circuit, Ku-Band, Output power density, Power added efficiency(PAE), Two-Stage