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Journal Article Ku-Band GaN HPA MMIC with High-Power and High-PAE Performances
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Authors
Youn Sub Noh, Yun Ho Choi, In-Bok Yom
Issue Date
2014-09
Citation
Electronics Letters, v.50, no.19, pp.1361-1363
ISSN
0013-5194
Publisher
IET
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1049/el.2014.1211
Project Code
14MR3100, Development of Flexible Payload Technologies for Next Satellite Broadcasting and Communications, Ahn Jae Young
Abstract
A Ku-band high-power and high-power-added efficiency (PAE) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) is demonstrated with a 0.25 μm gallium nitride (GaN) high electron mobility transistor technology on a silicon carbide substrate. Measured continuous-wave performances for the two-stage HPA in-fixture exhibit 17.5-18.3 W of output power (POUT) and 36.4-39.5% of PAE over the frequency range of 13.5-14.5 GHz. The fabricated two-stage HPA MMIC with all matching networks is as small as 3.3 × 3.5 mm, generating an output power density of 1522 mW/mm2.
KSP Keywords
3.5 mm, 5 GHz, Frequency Range, GaN HPA, High electron mobility transistor(HEMT), High power amplifier(HPA), Integrated circuit, Ku-Band, Output power density, Power added efficiency(PAE), Two-Stage