상세정보
학술지
Investigation on the Lasing Characteristics of InAs/InGaAsP Quantum Dots with Additional Confinement Structures
- 발행일
- 201405
- 출처
- Journal of Crystal Growth, v.393, pp.59-63
- ISSN
- 0022-0248
- 출판사
- Elsevier
- 협약과제
- 11MB1300, 반도체 나노구조를 이용한 펌핑용 10 W급 광원기술, 송정호
- 초록
- We report on morphological, optical, and lasing characteristics of InAs quantum dots (QDs) embedded in an In0.69Ga0.31As 0.67P0.33 quantum well (having a bandgap energy corresponding to a wavelength of 1.35 μm (1.35Q-InGaAsP)), which formed a dot-in-a-well (DWELL) structure. This DWELL was further sandwiched in In 0.85Ga0.15As0.32P0.68 layers (1.15 μm, 1.15Q-InGaAsP). A 2 monolayer-thick GaAs layer was simultaneously introduced right below the InAs QD layer in the DWELL structure (GDWELL). The emission wavelength of the InAs GDWELL was 1490 nm, which was slightly shorter than that of the InAs QDs embedded only in 1.15Q-InGaAsP layers. To evaluate the effects of the GDWELL structure on lasing characteristics, gain-guided broad-area (BA) and index-guided ridge-waveguide (RW) laser diodes (LDs) were fabricated. The BA-LDs with the InAs QDs embedded only in 1.15Q-InGaAsP layers did not show the lasing at room temperature (RT) even in pulsed mode. For the GDWELL structure, however, the lasing emissions from both the BA-LDs and RW-LDs were successfully achieved at RT in continuous-wave mode. © 2013 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Band-gap energy, DWELL structure, InAs QDs, InAs Quantum dots, Laser diode(LD), Lasing characteristics, Pulsed mode, Quantum Dot(QD), Quantum Well(QW), Room-temperature, Wave mode