상세정보
학술지
Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures
- 저자
- 강석주, 이관형, 유영준, Yue Zhao, 김범중, Kenji Watanabe, Takashi Taniguchi, James Hone, Philip Kim, Colin Nuckolls
- 발행일
- 201407
- 출처
- Advanced Functional Materials, v.24 no.32, pp.5157-5163
- ISSN
- 1616-301X
- 출판사
- John Wiley & Sons
- 초록
- Enhancing the device performance of single crystal organic field effect transistors (OFETs) requires both optimized engineering of efficient injection of the carriers through the contact and improvement of the dielectric interface for reduction of traps and scattering centers. Since the accumulation and flow of charge carriers in operating organic FETs takes place in the first few layers of the semiconductor next to the dielectric, the mobility can be easily degraded by surface roughness, charge traps, and foreign molecules at the interface. Here, a novel structure for high-performance rubrene OFETs is demonstrated that uses graphene and hexagonal boron nitride (hBN) as the contacting electrodes and gate dielectric layer, respectively. These hetero-stacked OFETs are fabricated by lithography-free dry-transfer method that allows the transfer of graphene and hBN on top of an organic single crystal, forming atomically sharp interfaces and efficient charge carrier-injection electrodes without damage or contamination. The resulting heterostructured OFETs exhibit both high mobility and low operating gate voltage, opening up new strategy to make high-performance OFETs and great potential for flexible electronics. Organic field effect transistors (OFETs) based on 2D graphene and hexagonal boron nitride heterostructures are fabricated by a dry-transfer method. The resulting heterostructured OFETs exhibit both high mobility and low operating voltage due to the atomically sharp interfaces of hBN flake and efficient charge carrier-injection from graphene electrodes. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- KSP 제안 키워드
- 2D graphene, AND gate, Boron nitride(BN), Charge carriers, Co. KGaA, Dielectric interface, Field effect transistors(Substrate temperature), Field-effect transistors(FETs), Flexible electronics, Graphene and hexagonal boron nitride heterostructures, Hexagonal boron nitride(h-BN)