상세정보
학술지
Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure
- 저자
- V Rajagopal Reddy, V Janardhanam, Jin-Woo Ju, 홍효봉, 최철종
- 발행일
- 201407
- 출처
- Semiconductor Science and Technology, v.29 no.7, pp.1-6
- ISSN
- 0268-1242
- 출판사
- Institute of Physics (IOP)
- 협약과제
- 14MC1500, 실감미디어를 위한 플렉시블 센서 기반 촉감 저장·재생 플랫폼 원천기술 개발, 홍효봉
- 초록
- We investigated the electrical properties of solution processed high-k Bi0.5Na0.5TiO3 (BNT)-BaTiO3 (BT) on n-GaN with Au electrode. Higher barrier height is obtained for Au/BNT-BT/n-GaN structure compared to Au/n-GaN structure. Thin interfacial layer is formed in between BNT-BT and n-GaN confirmed by TEM results. The interface state density of Au/BNT-BT/n-GaN structure is lower than that of Au/n-GaN structure due to the existence of interfacial layer (Ga-O) at the interface. It is observed that the frequency dispersion is decreased in the Au/BNT-BT/n-GaN structure. Poole-Frenkel mechanism is found to dominate the reverse leakage current in both Au/n-GaN and Au/BNT-BT/n-GaN structures. © 2014 IOP Publishing Ltd.
- KSP 제안 키워드
- Au electrode, Au/n-GaN, BNT-BT, Frequency Dispersion, High-K, Metal-insulator-semiconductor(MIS), Poole-Frenkel mechanism, Reverse leakage current, Solution-processed, barrier height, electrical properties(I-V curve)