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Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure
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- Authors
- V Rajagopal Reddy, V Janardhanam, Jin-Woo Ju, Hyobong Hong, Chel-Jong Choi
- Issue Date
- 2014-07
- Citation
- Semiconductor Science and Technology, v.29, no.7, pp.1-6
- ISSN
- 0268-1242
- Publisher
- Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated the electrical properties of solution processed high-k Bi0.5Na0.5TiO3 (BNT)-BaTiO3 (BT) on n-GaN with Au electrode. Higher barrier height is obtained for Au/BNT-BT/n-GaN structure compared to Au/n-GaN structure. Thin interfacial layer is formed in between BNT-BT and n-GaN confirmed by TEM results. The interface state density of Au/BNT-BT/n-GaN structure is lower than that of Au/n-GaN structure due to the existence of interfacial layer (Ga-O) at the interface. It is observed that the frequency dispersion is decreased in the Au/BNT-BT/n-GaN structure. Poole-Frenkel mechanism is found to dominate the reverse leakage current in both Au/n-GaN and Au/BNT-BT/n-GaN structures. © 2014 IOP Publishing Ltd.
- KSP Keywords
- Au electrode, Au/n-GaN, BNT-BT, Barrier height(BH), Electrical properties, Interfacial layer, Metal-insulator-semiconductor(MIS), Poole-Frenkel mechanism, Reverse leakage current, Solution-processed, frequency dispersion