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PN Junction Formation in CuInxGa(1_x)Se2-based Thin Film Solar Cell
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- Authors
- Soon Mi Park, Yeon Jin Yi, Yong Duck Chung, Dea-Hyung Cho, Je Ha Kim, Kyung Joong Kim, Jeong Won Kim
- Issue Date
- 2011-05
- Citation
- International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC) 2011, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- Culn x Ga (1-x) Se 2 (CIGS)-based thin film solar cell is one of the most promising chemical semiconductor devices because people achieved high power conversion efficiency of up to 20% at laboratory scale due to their high absorption property. Moreover, CIGS thin films cannot be applied only to flexible devices, but also be produced at low cost. However, its physical understandings of p-n junction formation are far from satisfactory. There are three different models to describe the photovoltaic behavior, such as p-CIGS/n-CdS heterojunction, p-CIGS/n-CIGS homojunction, and p-CIGS/n-ordered defect compound layer heterojunction. To clarify where the p-n junction in this solar cell really is, we measured band structure of CIGS films and CdS/CIGS heterojunction using photoemission spectroscopic techniques such as Inverse Photoemission Spectroscopy (IPES), Ultraviolet Photoelectron Spectroscopy (UPS), and X-ray Photoelectron Spectroscopy (XPS).
- KSP Keywords
- Absorption properties, Band structure, CIGS film, CIGS thin films, Compound layer, Conversion efficiency(C.E.), Flexible device, High absorption, Laboratory-scale, Low-cost, P-N junction