BROWSE
Detail
Journal Article
Evolution of local work function in epitaxial VO 2 thin films spanning the metal-insulator transition
Cited 30 time in 
Share 
Share
- Authors
- Ahrum Sohn, Haeri Kim, Dong-Wook Kim, Changhyun Ko, Shriram Ramanathan, Jonghyurk Park, Giwan Seo, Bong-Jun Kim, Jun-Hwan Shin, Hyun-Tak Kim
- Issue Date
- 2012-11
- Citation
- Applied Physics Letters, v.101, no.19, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP),
- Language
- English
- Type
- Journal Article
- Abstract
- Transport and Kelvin probe force microscopy measurements were simultaneously conducted on epitaxial VO 2 thin films. The samples work function abruptly dropped from 4.88 eV to 4.70 eV during heating from 333 K to 353 K, suggesting a significant change in its electronic band structure spanning the metal insulator transition. The work function showed nearly no statistical deviation across the films surface during the transition, likely due to band bending at the boundaries of the small domains. Resistance profiles confirmed that the local work function corresponded closely to the resistance of the corresponding area. © 2012 American Institute of Physics.
- KSP Keywords
- Kelvin Probe force microscopy, VO 2, band bending, electronic band structure, local work function, metal-insulator transition, thin film(TF)