상세정보
학술지
Evolution of local work function in epitaxial VO 2 thin films spanning the metal-insulator transition
- 발행일
- 201211
- 출처
- Applied Physics Letters, v.101 no.19, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP),
- 협약과제
- 12ZF1100, Seed형 기술개발을 위한 창의형 연구사업, 박선희
- 초록
- Transport and Kelvin probe force microscopy measurements were simultaneously conducted on epitaxial VO 2 thin films. The samples work function abruptly dropped from 4.88 eV to 4.70 eV during heating from 333 K to 353 K, suggesting a significant change in its electronic band structure spanning the metal insulator transition. The work function showed nearly no statistical deviation across the films surface during the transition, likely due to band bending at the boundaries of the small domains. Resistance profiles confirmed that the local work function corresponded closely to the resistance of the corresponding area. © 2012 American Institute of Physics.
- KSP 제안 키워드
- Kelvin Probe force microscopy, VO 2, band bending, electronic band structure, local work function, metal-insulator transition, thin film(TF)