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Journal Article
Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths
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- Authors
- Youngrak Park, Jung-Jin Kim, Woojin Chang, Hyun-Gyu Jang, Jeho Na, Hyunsoo Lee, Chi-Hoon Jun, Ho-young Cha, Jae Kyoung Mun, Sang Choon Ko, Eun Soo Nam
- Issue Date
- 2014-07
- Citation
- Electronics Letters, v.50, no.16, pp.1164-1165
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude. © The Institution of Engineering and Technology 2014.
- KSP Keywords
- GaN diode, GaN-on-Si, Non-recessed, Reverse leakage current, low onset voltage, recess depth, schottky barrier diode(SBD)