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Journal Article Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths
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Authors
Youngrak Park, Jung-Jin Kim, Woojin Chang, Hyun-Gyu Jang, Jeho Na, Hyunsoo Lee, Chi-Hoon Jun, Ho-young Cha, Jae Kyoung Mun, Sang Choon Ko, Eun Soo Nam
Issue Date
2014-07
Citation
Electronics Letters, v.50, no.16, pp.1164-1165
ISSN
0013-5194
Publisher
IET
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1049/el.2014.1747
Project Code
14MB1200, Next Generation Optical and Electrical Module Technology for Smart Data Center, Eun Soo Nam
Abstract
A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude. © The Institution of Engineering and Technology 2014.
KSP Keywords
GaN diode, GaN-on-Si, Non-recessed, Reverse leakage current, low onset voltage, recess depth, schottky barrier diode(SBD)