상세정보
학술지
Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths
- 발행일
- 201407
- 출처
- Electronics Letters, v.50 no.16, pp.1164-1165
- ISSN
- 0013-5194
- 출판사
- IET
- 협약과제
- 14MB1200, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
- 초록
- A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude. © The Institution of Engineering and Technology 2014.
- KSP 제안 키워드
- GaN diode, GaN-on-Si, Non-recessed, Reverse leakage current, low onset voltage, recess depth, schottky barrier diode(SBD)