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Stretchable Organic Thin-Film Transistors Fabricated on Wavy-Dimensional Elastomer Substrates Using Stiff-Island Structures
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- Authors
- Jeong-Seon Choi, Chan Woo Park, Bock Soon Na, Sang Chul Lim, Sang Seok Lee, Kyoung-Ik Cho, Hye Yong Chu, Jae Bon Koo, Soon-Won Jung, Sung-Min Yoon
- Issue Date
- 2014-09
- Citation
- IEEE Electron Device Letters, v.35, no.7, pp.762-764
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- Stretchable organic thin-film transistors (OTFTs) were fabricated on the polydimethysiloxane (PDMS) elastomer substrates by employing the wavy-dimensional and polyimide stiff-island structures. A low-Temperature solution process was also designed to obtain high strain profiles. The endurable maximum strains were estimated to be 2.28, 9.70, and 9.32% for the OTFTs formed on the flat, 1D-, and 2D-wavy PDMS elastomers, respectively. The field-effect mobilities were obtained to be 5 ~ 7×10-4 cm2 V-1 s-1 for all devices and they did not exhibit any degradation under the stretchable conditions before the fracture. The results suggest that the proposed methodologies were quite suitable for high-performance stretchable OTFTs.. © 1980-2012 IEEE.
- KSP Keywords
- First Stokes(S1), High performance, High strain, Organic thin-film transistors (otfts), Thin-Film Transistor(TFT), field effect, low-temperature solution process, organic thin film transistor(OTFT), thin film(TF)