상세정보
학술지
Stretchable Organic Thin-Film Transistors Fabricated on Wavy-Dimensional Elastomer Substrates Using Stiff-Island Structures
- 발행일
- 201409
- 출처
- IEEE Electron Device Letters, v.35 no.7, pp.762-764
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 14MB1400, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- 초록
- Stretchable organic thin-film transistors (OTFTs) were fabricated on the polydimethysiloxane (PDMS) elastomer substrates by employing the wavy-dimensional and polyimide stiff-island structures. A low-Temperature solution process was also designed to obtain high strain profiles. The endurable maximum strains were estimated to be 2.28, 9.70, and 9.32% for the OTFTs formed on the flat, 1D-, and 2D-wavy PDMS elastomers, respectively. The field-effect mobilities were obtained to be 5 ~ 7×10-4 cm2 V-1 s-1 for all devices and they did not exhibit any degradation under the stretchable conditions before the fracture. The results suggest that the proposed methodologies were quite suitable for high-performance stretchable OTFTs.. © 1980-2012 IEEE.
- KSP 제안 키워드
- First Stokes(S1), High performance, High strain, Low temperature(LT), Organic thin-film transistors (otfts), Thin-Film Transistor(TFT), field effect, low-temperature solution process, thin film(TF)