ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술대회 Thermoelectric Properties of the Multilayered Bi2Te3 with Chalcogenide Materials
Cited 0 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
류호준, 현승민, 송재용
발행일
201109
출처
European Conference on Thermoelectrics (ECT) 2011, pp.99-102
DOI
https://dx.doi.org/10.1063/1.4731506
협약과제
11MB3600, MEMS 에너지 변환 소자 국제표준 개발, 류호준
초록
Chalcogenide materials have been known as good candidates for thermoelectric materials including bismuth telluride and antimony telluride. Especially Bi2(1-x)Sb2xTe3(1-y)Se3y semimetal alloys family has a room temperature ZT value of about. Bismuth telluride based BiTeSb and BiTeSe multilayered thin films have been fabricated using cosputtering on Si substrate with varying applied power and thermal treatment. Thermoelectric properties have been affected by the texturing, the mobility of charge carriers, and the density of imperfections. In order to confirm the texture of the films we investigated the microstructure through x-ray diffraction. Carrier density, mobility, and resistivity have been measured by Hall-effect measurement system and Seebeck coefficient has been measured using temperature difference method. Seebeck coefficient of double layered BiTe/BiTeSb and BiTeSb/BiTeSe films have been affected by the mobility change. © 2012 American Institute of Physics.
KSP 제안 키워드
Antimony telluride(Sb-Te), Applied power, Bismuth telluride, Carrier density, Chalcogenide material, Charge carriers, Difference Method, Double layered, Hall-effect measurement, Mobility change, Multilayered thin films