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학술대회
Two-step Selenization of Cu-In-Ga Precursors for CIGS Thin Film Solar Cells by using Se Cracker
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- 발행일
- 201107
- 출처
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2011, pp.1-1
- 협약과제
- 11MB3100, 반응성 스퍼터링을 이용한 CIGS 초박막 고효율 태양전지 기술 개발, 김제하
- 초록
- Cu(In1?xGax)Se2 (CIGS) thin-film solar cells have been fabricated using the CIGS compound prepared with a two-step selenization process at 400 °C followed by successive thermal annealing at 550 °C. The compositions of the Cu-In-Ga precursors were controlled by changing the thickness ratio of the Cu-In and the Cu-Ga films. After the selenization, the thickness of the CIGS film was approximately three times that of the precursor layer. X-ray diffraction peaks showed that the CIGS had the chalcopyrite structure with a preferential orientation in the (112) direction. The composition analysis using X-ray fluorescence revealed that the Cu/[III] and the Ga/[III] ratios of CIGS changed in ranges of 0.66 ∼ 0.80 and 0.11 ∼ 0.20, respectively, with variations in the precursor thickness. We obtained a power conversion efficiency of 3.91% from the fabricated CIGS solar cell.
- KSP 제안 키워드
- CIGS film, CIGS solar cell, CIGS thin film solar cell, Chalcopyrite structure, Conversion efficiency(C.E.), Diffraction peaks, Precursor layer, Preferential orientation, Selenization process, Thermal annealing, Thickness ratio