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Two-step Selenization of Cu-In-Ga Precursors for CIGS Thin Film Solar Cells by using Se Cracker
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- Authors
- 이호섭, Rae-Man Park, Lee Kyu-Seok, 장호정, Kim Je Ha
- Issue Date
- 201107
- Source
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2011, pp.1-1
- Project Code
- 11MB3100, Development of High Efficiency CIGS Ultra Thin-Film Solar Cells by Reactive Sputtering, Kim Je Ha
- Abstract
- Cu(In1?xGax)Se2 (CIGS) thin-film solar cells have been fabricated using the CIGS compound prepared with a two-step selenization process at 400 °C followed by successive thermal annealing at 550 °C. The compositions of the Cu-In-Ga precursors were controlled by changing the thickness ratio of the Cu-In and the Cu-Ga films. After the selenization, the thickness of the CIGS film was approximately three times that of the precursor layer. X-ray diffraction peaks showed that the CIGS had the chalcopyrite structure with a preferential orientation in the (112) direction. The composition analysis using X-ray fluorescence revealed that the Cu/[III] and the Ga/[III] ratios of CIGS changed in ranges of 0.66 ∼ 0.80 and 0.11 ∼ 0.20, respectively, with variations in the precursor thickness. We obtained a power conversion efficiency of 3.91% from the fabricated CIGS solar cell.
- KSP Keywords
- CIGS film, CIGS solar cell, CIGS thin film solar cell, Chalcopyrite structure, Conversion efficiency(C.E.), Diffraction peaks, Precursor layer, Preferential orientation, Selenization process, Thermal annealing, Thickness ratio