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Growth and Structural Properties of Reactively Co-sputtered CIGS Films and Their Solar Cell Applications
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- Authors
- Jeha Kim, Nae-Man Park
- Issue Date
- 2014-02
- Citation
- Journal of the Korean Physical Society, v.64, no.3, pp.465-470
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- Using reactive sputtering, we fabricated stoichiometric CuIn1-xGaxSe2 (CIGS) thin films. Both Cu0.6Ga0.4 (CuGa) and Cu0.4In0.6 (CuIn) alloy targets were simultaneously sputtered under the delivery of elemental Se produced from a thermal cracker. By changing the sputtering rates of the CuGa and the CuIn, we were able to obtain the composition ratios of Cu/(Ga+In) and Ga/(Ga+In) in the range of 0.71-0.95 and 0.10-0.30, respectively. Both the grain size and the surface roughness of the CIGS film increased as the Cu/(Ga+In) ratio increased. In the X-ray diffraction analysis on CIGS films of 0.9 m, preferential growth with a [112] orientation was found, and reflections from the (211), (220)/(204), (301), (312)/(116), (400)/(008), and (332)/(316) planes were observed. The CIGS films showed the existence of Cu2-xSe phases in the Cu-rich samples and ordered defect compound (ODC) phases in the Cu-poor films, as confirmed in the Raman measurements. A best device performance of η = 8.1%, Voc = 0.442 V, Jsc = 34.3 mA/cm2, and FF = 53.4% was obtained from a cell fabricated with a CIGS layer (t = 0.9 μm) with the Cu/(Ga+In) ratio = 0.71 and the Ga/(Ga+In) ratio = 0.10. © 2014 The Korean Physical Society.
- KSP Keywords
- 42 V, CIGS film, CIGS layer, Co-sputtered, Cu-poor, Cu-rich, Diffraction analysis, Grain Size, Preferential growth, Raman measurements, Solar Cells