상세정보
학술지
Characterization of Amorphous Multilayered ZnO-SnO2 Heterostructure Thin Films and their Field Effect Electronic Properties
- 발행일
- 201411
- 출처
- Applied Physics Letters, v.105 no.20, pp.1-4
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 14MB1400, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- 초록
- Multilayered ZnO-SnO2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO2 layers. The highest electron mobility of 37 cm2/V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ~1010 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO2(1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO2 heterostructure film consisting of ZnO, SnO2, and ZnO-SnO2 interface layers.
- KSP 제안 키워드
- 3 V, 5 nm, Drain current, Electronic properties, Electronic structures, Electronic transport properties, I-V characteristic(Transport property), Thin-Film Transistor(TFT), electron mobility, field effect, pulsed laser ablation(PLA)