상세정보
학술지
Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate
- 발행일
- 201405
- 출처
- Solid-State Electronics, v.95, pp.42-45
- ISSN
- 0038-1101
- 출판사
- Elsevier
- 협약과제
- 14ZB1400, ESSOP CUBE 기술 기반 차세대 레이더 3D 모듈 개발, 이진호
- 초록
- This paper demonstrates normally-off dual gate AlGaN/GaN MISFETs with a selective area-recessed floating gate fabricated on the AlGaN/GaN-based heterostructure with an AlN insertion layer. For the fabrication of the dual gate structure, the AlGaN layer in the control gate region was fully recessed and then an Al2O3 layer as a gate dielectric was deposited by the atomic layer deposition method, which ensures the normally-off operation and greatly decreases the leakage current. An additional floating gate with selective area-recessed patterns, which is located between the control gate and the drain electrode, was employed to enhance the breakdown voltage. The fabricated normally-off dual gate AlGaN/GaN MISFET exhibited a threshold voltage of 2 V, a high ION/IOFF ratio of 3 × 108 at a drain voltage of 10 V, a maximum transconductance of 88 mS/mm at a gate voltage of 5.8 V, a drain current density of 364 mA/mm at a gate voltage of 8 V, and a breakdown voltage of 880 V. © 2014 Elsevier Ltd. All rights reserved.
- KSP 제안 키워드
- Atomic layer deposition method, Breakdown voltage(BDV), Control gate, Drain current, Drain electrode, Drain voltage, Floating gate, GaN-Based, Insertion layer, Leakage current, Normally-Off