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Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate
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- Authors
- Ho-Kyun Ahn, Zin-Sig Kim, Sung-Bum Bae, Hae-Cheon Kim, Dong-Min Kang, Sung-Il Kim, Jong-Min Lee, Byoung-Gue Min, Hyoung-Sup Yoon, Jong-Won Lim, Yong-Hwan Kwon, Eun-Soo Nam, Hyung-Moo Park, Hyun-Seok Kim, Jung-Hee Lee
- Issue Date
- 2014-05
- Citation
- Solid-State Electronics, v.95, pp.42-45
- ISSN
- 0038-1101
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- This paper demonstrates normally-off dual gate AlGaN/GaN MISFETs with a selective area-recessed floating gate fabricated on the AlGaN/GaN-based heterostructure with an AlN insertion layer. For the fabrication of the dual gate structure, the AlGaN layer in the control gate region was fully recessed and then an Al2O3 layer as a gate dielectric was deposited by the atomic layer deposition method, which ensures the normally-off operation and greatly decreases the leakage current. An additional floating gate with selective area-recessed patterns, which is located between the control gate and the drain electrode, was employed to enhance the breakdown voltage. The fabricated normally-off dual gate AlGaN/GaN MISFET exhibited a threshold voltage of 2 V, a high ION/IOFF ratio of 3 × 108 at a drain voltage of 10 V, a maximum transconductance of 88 mS/mm at a gate voltage of 5.8 V, a drain current density of 364 mA/mm at a gate voltage of 8 V, and a breakdown voltage of 880 V. © 2014 Elsevier Ltd. All rights reserved.
- KSP Keywords
- Atomic layer deposition method, Breakdown Voltage, Control gate, Drain current, Drain electrode, Drain voltage, Floating Gate, GaN-Based, Gate voltage, Insertion layer, Leakage Current