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A 2.14-GHz GaN MMIC Doherty Power Amplifier for Small-Cell Base Stations
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- Authors
- Cheol Ho Kim, Seunghoon Jee, Gweon-Do Jo, Kwangchun Lee, Bumman Kim
- Issue Date
- 2014-04
- Citation
- IEEE Microwave and Wireless Components Letters, v.24, no.4, pp.263-265
- ISSN
- 1531-1309
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A novel 2.14-GHz Doherty power amplifier (PA) was designed and fabricated using a 0.25-μ m GaN on SiC monolithic microwave integrated circuit (MMIC), to build small-cell base stations. To reduce the size and loss, lumped passive elements were employed in a manner of minimizing the device count. The core components of the PA were integrated on the MMIC die to reduce the area, and low-loss chip inductors were mounted around the die to enhance the efficiency. An unconventional uneven power splitting was also used to enhance the performance. For a continuous wave, a 2-dB-gain-compression power of 40.5 dBm was obtained with a drain efficiency (DE) of 60.4%. At 7.3-dB backed-off power, a DE of 52.2% was obtained with a power gain of 15.7 dB. When a 10-MHz-bandwidth long-term evolution signal with 7.1-dB peak-to-average power ratio was applied, an adjacent channel leakage ratio (ACLR) of-34.7 dBc with a DE of 51.8% was achieved at an average power of 33.2 dBm. After a digital pre-distortion process, the ACLR and DE were improved to-49.6 dBc and 52.7%, respectively. © 2014 IEEE.
- KSP Keywords
- Adjacent channel leakage ratio(ACLR), Doherty power amplifier(DPA), GaN on SiC, Long Term Evolution(LTE), Low loss, Microwave Integrated Circuits(MICs), Microwave monolithic integrated circuits(MMIC), Passive elements, Peak to average Power ratio(PAPR), Power gain, Power splitting