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학술대회
Novel Aqueous Solution Processed Fluorine-doped Indium Zinc Oxide (F-IZO) THin-Film Transistors Fabricated at 200°C
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- 발행일
- 201208
- 출처
- International Meeting on Information Display (IMID) 2012, pp.113-114
- 협약과제
- 13VB2100, 고품위 plastic AMOLED 원천 기술 개발, 박상희
- KSP 제안 키워드
- Fluorine-doped, Indium zinc oxide, Thin-Film Transistor(TFT), Zinc oxide(ZnO), aqueous solution processed, thin film(TF)