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Conference Paper
Novel Aqueous Solution Processed Fluorine-doped Indium Zinc Oxide (F-IZO) THin-Film Transistors Fabricated at 200°C
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- Authors
- Jin-Suk Seo, Jun-Hyuck Jeon, Young Hwan Hwang, Min Ki Ryu, Sang-Hee Ko Park, Byeong- Soo Bae
- Issue Date
- 2012-08
- Citation
- International Meeting on Information Display (IMID) 2012, pp.113-114
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Fluorine-doped, Indium Zinc Oxide, Thin-Film Transistor(TFT), Zinc Oxide(ZnO), aqueous solution processed, thin film(TF)